Modeling and simulation of charge generation events caused by ion irradiation in high voltage power devices

被引：0

作者：

Kaindl, W ^{[1
]}

Wachutka, G ^{[1
]}

Sölkner, G ^{[1
]}

机构：

[1] Tech Univ Munich, Inst Phys Electrotechnol, D-80290 Munich, Germany

来源：

SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001 | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a model that describes the initial generation of charge due to the loss of kinetic energy of an ion penetrating into a semiconductor device. 2D simulations of a reverse biased power diode visualize the evolution of carrier densities and electric fields in the interior of the device as initiated by the ion. For the case of irradiation with 17MeV C-12 ions, the simulations agree well with recent experimental findings.

引用

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页码：436 / 439

页数：4

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