Dislocation analysis of 4H-and 6H-SiC single crystals using micro-Raman spectroscopy

被引：4
|
作者：
Shin, Y. J.
Kim, W. J.
Kim, H. -Y.
Bahng, W.
机构：
来源：
SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷
关键词：
TSD; micro-Raman spectroscopy; on-axis; 4H-SiC; 6H-SiC; DEFECTS;
D O I：
10.4028/www.scientific.net/MSF.740-742.481
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Micro-Raman spectroscopy is an excellent non-destructive analysis method, which compensates for disadvantages of KOH method. Raman shifts of A(1)(LO) and E-1(TO) band paeks at threading screw dislocation(TSD) were investigated in n-type on/off-axis 4H- and 6H-SiC single crystal wafers by micro-Raman scattering at room temperature. The results showed that A(1)(LO) band were shifted toward higher frequency while the E-1(TO) band were shifted toward lower frequency on the on-axis wafers. The shifts are caused by increasing electron concentration and lattice disorder near the dislocation core, respectively. In the off-axis wafer, no shift was observed possibly due to the measurement geometry which does not contain whole dislocation core.
引用
收藏
页码：481 / 484
页数：4
相关论文
共 50 条
  • [41] Spin Alignment of NV- Centers in 4H-and 6H-SiC Crystals Induced by IR and Visible Optical Excitation
    Murzakhanov, F. F.
    Shurtakova, D. V.
    Oleynikova, E. I.
    Mamin, G. V.
    Sadovnikova, M. A.
    Kazarova, O. P.
    Mokhov, E. N.
    Gafurov, M. R.
    Soltamov, V. A.
    APPLIED MAGNETIC RESONANCE, 2024, 55 (09) : 1175 - 1182
  • [42] Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC
    Tiberj, Antoine
    Camara, Nicolas
    Godignon, Philippe
    Camassel, Jean
    NANOSCALE RESEARCH LETTERS, 2011, 6 : 1 - 9
  • [43] Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC
    Antoine Tiberj
    Nicolas Camara
    Philippe Godignon
    Jean Camassel
    Nanoscale Research Letters, 6
  • [44] Study on Electrical Properties of Threading Screw Dislocation of N-type 4H-SiC Epilayer Using Micro-Raman Spectroscopy
    Miao, Rui-xia
    Zhang, Xia
    Miao, Rong-xia
    2015 4TH INTERNATIONAL CONFERENCE ON ENERGY AND ENVIRONMENTAL PROTECTION (ICEEP 2015), 2015, : 278 - 281
  • [45] Divacancy model for P6/P7 centers in 4H-and 6H-SiC
    Son, N. T.
    Umeda, T.
    Isoya, J.
    Gali, A.
    Bockstedte, M.
    Magnusson, B.
    Ellison, A.
    Morishita, N.
    Ohshima, T.
    Itoh, H.
    Janzen, E.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 527 - 530
  • [46] Basal plane dislocation-threading edge dislocation complex dislocations in 6H-SiC single crystals
    Sun, Wei
    Song, Youting
    Liu, Chunjun
    Peng, Tonghua
    Wang, Wenjun
    Chen, Xiaolong
    MATERIALS EXPRESS, 2015, 5 (01) : 63 - 67
  • [47] Characterization of Vanadium Doped 4H-and 6H-SiC Grown by PVT Method Using the Open Seed Backside
    Racka-Dzietko, K.
    Tymicki, E.
    Grasza, K.
    Raczkiewicz, M.
    Jakiela, R.
    Kozubal, M.
    Jurkiewicz-Wegner, E.
    Brzozowski, A.
    Diduszko, R.
    Piersa, M.
    Kosciewicz, K.
    Pawlowski, M.
    Krupka, J.
    SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 21 - +
  • [48] Influence of Electrochemical Etching on Electroluminescence from n-Type 4H-and 6H-SiC
    van Dorp, D. H.
    den Otter, J. H.
    Hijnen, N.
    Bergmeijer, M.
    Kelly, J. J.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (06) : D49 - D52
  • [49] Angle-Resolved Intensity of Polarized Micro-Raman Spectroscopy for 4H-SiC
    Chang, Ying
    Xiao, Aixia
    Li, Rubing
    Wang, Miaojing
    He, Saisai
    Sun, Mingyuan
    Wang, Lizhong
    Qu, Chuanyong
    Qiu, Wei
    CRYSTALS, 2021, 11 (06):
  • [50] Micro-Raman spectroscopy of graphene grown on stepped 4H-SiC (0001) surface
    Grodecki, K.
    Bozek, R.
    Strupinski, W.
    Wysmolek, A.
    Stepniewski, R.
    Baranowski, J. M.
    APPLIED PHYSICS LETTERS, 2012, 100 (26)
12345