Investigation of the Properties of Al-doped ZnO Thin Films with Sputtering Pressure Deposition by RF Magnetron Sputtering

被引：0

作者：

Shuai, Weiqiang ^{[1
]}

Hu, Yuehui ^{[1
]}

Chen, Yichuan ^{[1
]}

Tong, Fan ^{[1
]}

Lao, Zixuan ^{[1
]}

机构：

[1] Jingdezhen Ceram Inst, Sch Mech & Elect Engn, Jingdezhen 333403, Jiangxi, Peoples R China

来源：

PROCEEDINGS OF THE 7TH INTERNATIONAL CONFERENCE ON EDUCATION, MANAGEMENT, INFORMATION AND MECHANICAL ENGINEERING (EMIM 2017) | 2017年 / 76卷

关键词：

Al-doped ZnO; RF magnetron sputtering; Sputtering pressure;

D O I：

暂无

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

The aluminum doped ZnO thin films were prepared on quartz glass substrates by RF magnetron sputtering at room temperature with varying sputtering pressure. As the sputtering pressure increased, the crystallinity of AZO thin films improved and the surface crystallite size increased. The optimized AZO thin film obtained at the sputtering pressure of 1 Pa exhibited the lowest resistivity of 8.6X10((boolean AND)-3) Omega.cm and an average transmittance of 74.15% in the wavelength range of 400 to 1000 nm.

引用

页码：1789 / 1792

页数：4

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