Investigation of the properties of W-doped ZnO thin films with modulation power deposition by RF magnetron sputtering

In this study, tungsten-doped zinc oxide (WZO) thin films were deposited on quartz glass substrates with varied modulation powers using a radio frequency (RF) magnetron sputtering technique. The crystallinity, along with the microstructural, optical and electrical properties of the WZO and zinc oxide thin films were further investigated and compared. When the modulation power was increased from 100 to 250 W, the crystallinity of WZO thin films improved and the surface crystallite size increased. An optimized WZO thin film obtained at a modulation power of 250 W exhibited a highest carrier concentration of 5.39 x 10(19) cm(-3) and a highest hall mobility of 17.3 cm(2) V- 1 s(-1). Furthermore, it also displayed a lowest resistivity of 6.69 x 10(-3) Omega cm and an average transmittance of 81.25% in the wavelength range of 400-2500 nm. Lastly, an increase in carrier concentration resulted in a decrease in infrared transmittance.