Investigation of Semi-Polar GaN Grown on (0001) C-plane Nano-Sized Patterned-Sapphire Substrates

被引：0

作者：

Su, Yin-Cent ^{[1
]}

Chen, Po-Hsun ^{[1
,3
]}

Hung, Zheng-Hung ^{[2
]}

You, Yao-Hong ^{[1
,3
]}

Chen, Yen-Pu ^{[1
]}

Hsu, Ta-Cheng ^{[4
]}

Lin, Yu-Yao ^{[4
]}

Lin, Ray-Ming ^{[5
,6
]}

Kuan, Chieh-Hsiung ^{[1
,2
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Grad Inst Elect Engn, Taipei, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Grad Inst Photon & Optoelect, Taipei, Taiwan

[3] Kingwave Corp, 409,Zhongzheng Rd, Taipei 11163, Taiwan

[4] Epistar Corp, 5,Li Hsin 5th Rd,Hsinchu Sci Pk, Hsinchu 300, Taiwan

[5] Chang Gung Univ, Grad Inst Elect Engn, Taoyuan, Taiwan

[6] Chang Gung Univ, Green Technol Res Ctr, Taoyuan, Taiwan

来源：

2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reported the growth of semi-polar GaN epi-layers on (0001) c-plane nanosized patterned-sapphire substrates (c-NPSSs). In addition, the impact of c-NPSSs on the quality of semi-polar film had also been studied.

引用

页数：2

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