Preparation of CuGaS2 thin films by two-stage MOCVD method

被引：23

作者：

Kim, Sin Kyu ^{[1
]}

Park, Jong Pil ^{[1
]}

Kim, Min Kyung ^{[1
]}

Ok, Kang Min ^{[1
]}

Shim, Il-Wun ^{[1
]}

机构：

[1] Chung Ang Univ, Dept Chem, Seoul 156756, South Korea

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2008年 / 92卷 / 11期

关键词：

Tris(N; N-ethylbutyldithiocarbamato)gallium(III); CuGaS2 thin films; MOCVD;

D O I：

10.1016/j.solmat.2008.05.003

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Copper gallium disulfide (CuGaS2; CGS) films were deposited on glass or ITO glass by two-stage metal-organic chemical vapor deposition (MOCVD) method, using Cu- and Ga/S-containing precursors without toxic H2S gas. First, pure Cu thin films were prepared on glass substrates by using a single-source precursor, bis(ethylbutyrylacetato)copper(II) or bis(ethylisobutyrylacetato)copper(II). Second, the resulting Cu films were processed using tris(N,N-ethylbutyldithiocarbamato)gallium(III) at 410-470 degrees C to produce CuGaS2 films. The optical band gap of the CGS film grown at 440 degrees C was about 2.53 eV. In addition, it was found that the elemental ratio of Cu and Ga elements of the CGS films can be elaborately adjusted by controlling deposition conditions on demand. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1311 / 1314

页数：4

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