GROWTH OF CUGAS2 SINGLE-CRYSTALS BY TRAVELING HEATER METHOD

被引：19
|
作者：
MIYAKE, H
SUGIYAMA, K
机构：
[1] Department of Electrical Engineering, Mie University, Mie
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 10期
关键词：
CuGa[!sub]x[!/sub]In[!sub]1-x[!/sub]S[!sub]2[!/sub; CuGaS[!sub]2[!/sub; Photo luminesce nee; Single crystal growth; Solution growth; THM; Traveling heater method;
D O I：
10.1143/JJAP.29.L1859
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Growth of bulk CuGaS2single crystals by the traveling heater method (THM) with In solvent has been investigated. The THM growth was performed at 1050°C, where the In solution saturated with stoichiometric CuGaS2solute is a single liquid phase. The obtained single crystals were solid solutions CuGaxIn1-xS2, and the mole fraction 1-x of CuInS2was 0.02–0.03 along the entire crystal length. The photoluminescence spectra show a weak near-band-edge emission peak and two strong and broad low-energy emission peaks. © 1990 IOP Publishing Ltd.
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页码：L1859 / L1861
页数：3
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