Capacitance-voltage characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe with various insulators

被引：26
|
作者：
Voitsekhovskii, A. V. [1 ,2 ]
Nesmelov, S. N. [2 ]
Dzyadukh, S. M. [2 ]
机构：
[1] Tomsk State Univ, Dept Radiophys, Tomsk 634050, Russia
[2] Siberian Phys Tech Inst TSU, Lab Opt Elect, Tomsk 634050, Russia
来源：
THIN SOLID FILMS | 2012年 / 522卷
关键词：
Metal-insulator-semiconductor; Mercury cadmium telluride; Graded-gap layer; Capacitance-voltage characteristics; Interface; Molecular-beam epitaxy; CDTE PASSIVATION; MIS-STRUCTURES; INTERFACE; HG1-XCDXTE; EPILAYERS; GROWTH; LAYERS;
D O I：
10.1016/j.tsf.2012.08.024
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Metal-insulator-semiconductor structures based on HgCdTe are grown by molecular-beam epitaxy. Near-surface graded-gap layers with a high CdTe content are inserted on both sides of the epitaxial HgCdTe film. The capacitance-voltage characteristics of these structures are studied experimentally. The main characteristics of these graded-gap HgCdTe structures are determined taking into account the effect of the non-uniform composition of the near-surface layers on the measured parameters. The capacitance-voltage characteristics of the graded-gap HgCdTe structures with various insulators are examined and the densities of surface states, densities of fixed and mobile charges are evaluated. The properties of the interface for CdTe grown in situ are found to be fairly good. We found that for structures based on HgCdTe-CdTe typical of very low density of mobile charges, the density of fixed charge does not exceed a 5.5x10(10) cm(-2). (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：261 / 266
页数：6
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