Field distribution in a semiconductor near the surface at large currents

被引：0
|
作者：
Kozhushner, MA [1 ]
Muryasov, RR [1 ]
机构：
[1] Russian Acad Sci, NN Semenov Chem Phys Inst, Moscow 117977, Russia
来源：
CHEMICAL PHYSICS REPORTS | 1999年 / 18卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
A distribution of the electric field and charge density in a semiconductor near its surface at large current densities in scanning tunnelling microscopy is examined. Dependence of the distributions on two external parameters - the field at the interface and density of the tunnelling current - are derived.
引用
收藏
页码：139 / 147
页数：9
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