Field distribution in a semiconductor near the surface at large currents

被引：0

作者：

Kozhushner, MA ^{[1
]}

Muryasov, RR ^{[1
]}

机构：

[1] Russian Acad Sci, NN Semenov Chem Phys Inst, Moscow 117977, Russia

来源：

CHEMICAL PHYSICS REPORTS | 1999年 / 18卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

A distribution of the electric field and charge density in a semiconductor near its surface at large current densities in scanning tunnelling microscopy is examined. Dependence of the distributions on two external parameters - the field at the interface and density of the tunnelling current - are derived.

引用

页码：139 / 147

页数：9

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