The embryonic form of the integrated superluminescent diode

被引：1

作者：

Zhao, YS ^{[1
]}

Devane, G ^{[1
]}

Sun, ZZ ^{[1
]}

Stair, KA ^{[1
]}

Liu, Y ^{[1
]}

Du, GT ^{[1
]}

Chang, RPH ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 05期

关键词：

HIGH-POWER; AMPLIFIER;

D O I：

10.1088/0268-1242/12/5/010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monolithic integration of a superluminescent diode with a power tapered semiconductor amplifier is suggested. The basic operation of the integrated optical source is demonstrated under pulse conditions. Results indicate that a superluminescent source not only of high output power but also of short coherence length can be obtained by the integrated device.

引用

页码：576 / 579

页数：4

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