The embryonic form of the integrated superluminescent diode

被引：1
|
作者：
Zhao, YS [1 ]
Devane, G [1 ]
Sun, ZZ [1 ]
Stair, KA [1 ]
Liu, Y [1 ]
Du, GT [1 ]
Chang, RPH [1 ]
机构：
[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 05期
关键词：
HIGH-POWER; AMPLIFIER;
D O I：
10.1088/0268-1242/12/5/010
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Monolithic integration of a superluminescent diode with a power tapered semiconductor amplifier is suggested. The basic operation of the integrated optical source is demonstrated under pulse conditions. Results indicate that a superluminescent source not only of high output power but also of short coherence length can be obtained by the integrated device.
引用
收藏
页码：576 / 579
页数：4
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