Homogeneous pinhole free 1 nm Al2O3 tunnel barriers on graphene

被引：27
|
作者：
Dlubak, B. [1 ]
Martin, M. -B.
Deranlot, C.
Bouzehouane, K.
Fusil, S.
Mattana, R.
Petroff, F.
Anane, A.
Seneor, P.
Fert, A.
机构：
[1] Unite Mixte Phys CNRS Thales, F-91767 Palaiseau, France
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 20期
关键词：
alumina; dielectric thin films; graphene; sputter deposition; tunnelling; EPITAXIAL GRAPHENE; SPIN INJECTION; TRANSPORT; DEVICE; ART;
D O I：
10.1063/1.4765348
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the topographical and electrical characterisations of 1 nm thick Al2O3 dielectric films on graphene. The Al2O3 is grown by sputtering a 0.6 nm Al layer on graphene and subsequentially oxidizing it in an O-2 atmosphere. The Al2O3 layer presents no pinholes and is homogeneous enough to act as a tunnel barrier. A resistance-area product in the mega-ohm micrometer-square range is found. Comparatively, the growth of Al2O3 by evaporation does not lead to well-wetted films on graphene. Application of this high quality sputtered tunnel barrier to efficient spin injection in graphene is discussed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4765348]
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页数：3
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