Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface

被引：29

作者：

Yamaguchi, Takehiro ^{[1
]}

Masubuchi, Satoru ^{[1
,2
]}

Iguchi, Kazuyuki ^{[1
]}

Moriya, Rai ^{[1
]}

Machida, Tomoki ^{[1
,2
,3
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

[3] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2012年 / 324卷 / 05期

基金：

日本科学技术振兴机构;

关键词：

Spin injection; Graphene; Tunnel barrier; Atomic layer deposition;

D O I：

10.1016/j.jmmm.2011.09.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al2O3 with a smooth surface. Using this composite tunnel barrier of ALD-Al2O3 and PTCA, a spin injection signal of similar to 30 Omega has been observed from non-local magnetoresistance measurements at 45 K, revealing potentially high performance of ALD-Al2O3/PTCA tunnel barrier for spin injection into graphene. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：849 / 852

页数：4

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