Increase in the emission wavelength (over 1800nm) of InAs quantum dots grown on InP substrates using a dot-in-well structure

被引：0

作者：

Akahane, Kouichi ^{[1
]}

Matumoto, Atsushi ^{[1
]}

Umezawa, Toshimasa ^{[1
]}

Yamamoto, Naokatsu ^{[1
]}

Hashimoto, Keita ^{[2
]}

Takai, Hiroshi ^{[2
]}

机构：

[1] Natl Inst Informat & Commun Technol, 4-2-1 Nukuikita Machi, Koganei, Tokyo 1848795, Japan

[2] Tokyo Denki Univ, Adachi Ku, 5 Senju Asahi Cho, Tokyo 1208551, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2017年 / 254卷 / 02期

关键词：

InAs; InP; molecular beam epitaxy; quantum dots; quantum wells; self-assemby; THRESHOLD CURRENT; TEMPERATURE; LASERS; FABRICATION; DEPENDENCE; EFFICIENCY; GAAS; GAIN; BAND;

D O I：

10.1002/pssb.201600490

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A dot-in-well structure for quantum dot (QD) growth on InP (001) vicinal substrates was introduced to increase the emission wavelength. The emission wavelength of the QDs changed from 1600nm in conventional structures to 1850nm in the proposed dot-in-well structure, when measured at room temperature. The emission intensity of this dot-in-well structure was the same as that of the conventional structure, implying that the dot-in-well structure did not degrade crystal quality.

引用

页数：4

共 34 条

[31] Intense 1.5 μm emission from InAs quantum dots on exact and vicinal (001) InP surface grown by droplet hetero-epitaxy using OMVPE
Nonogaki, Y.
Iguchi, T.
Fuchi, S.
Fujiwara, Y.
Takeda, Y.
Materials Science & Engineering B: Solid-State Materials for Advanced Technology, 1998, B57 (01): : 84 - 86
[32] Intense 1.5 μm emission from InAs quantum dots on exact and vicinal (001) InP surface grown by droplet hetero-epitaxy using OMVPE
Nonogaki, Y
Iguchi, T
Fuchi, S
Fujiwara, Y
Takeda, Y
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 57 (01): : 84 - 86
[33] Suppression of thermal carrier escape and efficient photo-carrier generation by two-step photon absorption in InAs quantum dot intermediate-band solar cells using a dot-in-well structure
Asahi, S.
Teranishi, H.
Kasamatsu, N.
Kada, T.
Kaizu, T.
Kita, T.
JOURNAL OF APPLIED PHYSICS, 2014, 116 (06)
[34] InAs/GaAs quantum-dot laser diode lasing at 1.3μm with triple-stacked-layer dots-in-a-well structure grown by atomic layer epitaxy
Kim, Kwang Woong
Cho, Nam Ki
Ryu, Sung Phil
Song, Jin Dong
Choi, Won Jun
Lee, Jung Il
Park, Jung Ho
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (10A): : 8010 - 8013

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