Increase in the emission wavelength (over 1800nm) of InAs quantum dots grown on InP substrates using a dot-in-well structure

被引：0

作者：

Akahane, Kouichi ^{[1
]}

Matumoto, Atsushi ^{[1
]}

Umezawa, Toshimasa ^{[1
]}

Yamamoto, Naokatsu ^{[1
]}

Hashimoto, Keita ^{[2
]}

Takai, Hiroshi ^{[2
]}

机构：

[1] Natl Inst Informat & Commun Technol, 4-2-1 Nukuikita Machi, Koganei, Tokyo 1848795, Japan

[2] Tokyo Denki Univ, Adachi Ku, 5 Senju Asahi Cho, Tokyo 1208551, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2017年 / 254卷 / 02期

关键词：

InAs; InP; molecular beam epitaxy; quantum dots; quantum wells; self-assemby; THRESHOLD CURRENT; TEMPERATURE; LASERS; FABRICATION; DEPENDENCE; EFFICIENCY; GAAS; GAIN; BAND;

D O I：

10.1002/pssb.201600490

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A dot-in-well structure for quantum dot (QD) growth on InP (001) vicinal substrates was introduced to increase the emission wavelength. The emission wavelength of the QDs changed from 1600nm in conventional structures to 1850nm in the proposed dot-in-well structure, when measured at room temperature. The emission intensity of this dot-in-well structure was the same as that of the conventional structure, implying that the dot-in-well structure did not degrade crystal quality.

引用

页数：4

共 34 条

[21] Wavelength control of 1.3-1.6μm light emission from the quantum dots self-formed in GaAs/InAs short-period superlattices grown on InP (411)A substrates
Asahi, H. (asahi@sanken.osaka-u.ac.jp), 1600, American Institute of Physics Inc. (96):
[22] Wavelength control of 1.3-1.6μm light emission from the quantum dots self-formed in GaAs/InAs short-period superlattices grown on InP (411)A substrates
Mori, J
Nakano, T
Shimada, T
Hasegawa, S
Asahi, H
JOURNAL OF APPLIED PHYSICS, 2004, 96 (03) : 1373 - 1375
[23] 1.3-1.5-μm-wavelength GaAs/InAs superlattice quantum-dot light-emitting diodes grown on InP (411)A substrates
Mori, J
Nakano, T
Shimada, T
Hasegawa, S
Asahi, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (7A): : L901 - L903
[24] Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm
Shimomura, K.
Kamiya, I.
APPLIED PHYSICS LETTERS, 2015, 106 (08)
[25] Exciton Fine Structure in InAs Quantum Dots with Cavity-Enhanced Emission at Telecommunication Wavelength and Grown on a GaAs(111)A Vicinal Substrate
Barbiero, A.
Tuktamyshev, A.
Pirard, G.
Huwer, J.
Muller, T.
Stevenson, R. M.
Bietti, S.
Vichi, S.
Fedorov, A.
Bester, G.
Sanguinetti, S.
Shields, A. J.
PHYSICAL REVIEW APPLIED, 2022, 18 (03)
[26] Extending emission wavelength of InAs/GaAs quantum dots beyond 1.3 μm by using quantum dot bi-layer for broadband light source
Ozaki, N.
Nakatani, Y.
Ohkouchi, S.
Ikeda, N.
Sugimoto, Y.
Asakawa, K.
Clarke, E.
Hogg, R. A.
JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 553 - 557
[27] 1.3-1.6-μm-wavelength quantum dots self-formed in GaAs/InAs short-period superlattices grown on InP (411)A substrates
Asahi, H. (asahi@sanken.osaka-u.ac.jp), 2001, Japan Society of Applied Physics (40):
[28] 1.3-1.6-μm-wavelength quantum dots self-formed in GaAs/InAs short-period superlattices grown on InP (411)A substrates
Matsuda, S
Asahi, H
Mori, J
Watanabe, D
Asami, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (6B): : L586 - L588
[29] Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers
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Ma, Wenquan
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Zhang, Yanhua
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Cui, Kai
Chen, Lianghui
Shi, Yanli
APPLIED PHYSICS LETTERS, 2011, 98 (10)
[30] Extended emission wavelength beyond 2.2 μm in strained multiple-quantum-well laser using InGaAsSb material grown on InP substrate
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APPLIED PHYSICS LETTERS, 2023, 122 (14)

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