RF Characterization of 28 nm FD-SOI Transistors Up To 220 GHz

被引：2
|
作者：
Deng, Marina [1 ]
Fregonese, Sebastien [1 ]
Dormieu, Benjamin [2 ]
Scheer, Patrick [2 ]
De Matos, Magali [1 ]
Zimmer, Thomas [1 ]
机构：
[1] Univ Bordeaux, IIMS Lab, 351 Cours Liberat, F-33405 Talence, France
[2] STMicroelectronics, 850 Rue Jean Monnet, F-38926 Crolles, France
来源：
2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) | 2019年
关键词：
28nm FD-SOI; transistors; small-signal; RF; characterization; CALIBRATION;
D O I：
10.1109/eurosoi-ulis45800.2019.9041884
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper shows the RF characterization results obtained up to 220 GHz on 28 nm fully-depleted silicon-on-insulator (FD-SOI) MOS transistors. The standard 2-dummies Open-Short de-embedding method was compared to a 3-dummies Pad-Short-Open de-embedding method. Both methods were applied to the S-parameters measurements and were used to extract the RF performances of 310/330 GHz f(T)/f(max) of this advanced transistor technology.
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页数：4
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