Properties of N-doped ZnO Films by RF Magnetron Sputtering

Using the radio frequency reactive magnetron sputtering technique, ZnO:N thin films were fabricated on glass substrate by changing the Ar/N-2 flow ratio from 9/1 to 9/4. The samples were characterizated on the film microstructure and optical properties by XRD, UV- visible spectrophotometer and Fourier transform infrared spectroscopy. The XRD results show that no significant peaks appeared at less N flow and the light transmission rate of UV-Vis has Small fluctuations between 320 similar to 780 nm wavelength; with increasing N flow, there was only (002) single peak in curves of XRD, transmittance of UV had a sharp decline below the 400 nm wavelength; when argon-nitrogen flow ratio was increased to 9/4, it is show that there were two peaks near 34 degrees of 20 in curves of XRD but no significant change in UV transmittance.