Demonstration and modeling of multi-bit resistance random access memory

被引：23

作者：

Yang, Xiang ^{[1
]}

Chen, Albert B. K. ^{[1
]}

Choi, Byung Joon ^{[1
]}

Chen, I-Wei ^{[1
]}

机构：

[1] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.4790158

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Although intermediates resistance states are common in resistance random access memory (RRAM), two-way switching among them has not been demonstrated. Using a nanometallic bipolar RRAM, we have illustrated a general scheme for writing/rewriting multi-bit memory using voltage pulses. Stability conditions for accessing intermediate states have also been determined in terms of a state distribution function and the weight of serial load resistance. A multi-bit memory is shown to realize considerable space saving at a modest decrease of switching speed. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790158]

引用

页数：4

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