Surface passivation of GaAs nanowires by the atomic layer deposition of AlN

被引：1

作者：

Shtrom, I. V. ^{[1
,2
,3
]}

Bouravleuv, A. D. ^{[1
,2
,3
]}

Samsonenko, Yu B. ^{[2
,3
,4
]}

Khrebtov, A. I. ^{[2
,4
]}

Soshnikov, I. P. ^{[1
,2
,3
]}

Reznik, R. R. ^{[2
,4
,6
]}

Cirlin, G. E. ^{[2
,3
,4
]}

Dhaka, V. ^{[5
]}

Perros, A. ^{[5
]}

Lipsanen, H. ^{[5
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] St Petersburg Natl Res Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia

[3] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 190103, Russia

[4] St Petersburg Natl Res Univ Informat Technol Mech, St Petersburg 197101, Russia

[5] Aalto Univ, FI-00076 Espoo, Finland

[6] St Petersburg State Polytech Univ, St Petersburg 195251, Russia

来源：

SEMICONDUCTORS | 2016年 / 50卷 / 12期

基金：

俄罗斯科学基金会;

关键词：

PHOTOLUMINESCENCE;

D O I：

10.1134/S1063782616120186

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25--thick AlN layer.

引用

页码：1619 / 1621

页数：3

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