Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO2/Al/Polyimide Structure

被引：69
|
作者：
Zhao, Jinshi [1 ]
Zhang, Ming [1 ]
Wan, Shangfei [1 ]
Yang, Zhengchun [1 ]
Hwang, Cheol Seong [2 ,3 ]
机构：
[1] Tianjin Univ Technol, Tianjin Key Lab Film Elect & Commun Devices, Sch Elect & Elect Engn, Tianjin 300384, Peoples R China
[2] Seoul Natl Univ, Dept Mat Sci & Engn, 599 Gwanak Ro, Seoul 151744, South Korea
[3] Seoul Natl Univ, Interuniv Semicond Res Ctr, 599 Gwanak Ro, Seoul 151744, South Korea
来源：
ACS APPLIED MATERIALS & INTERFACES | 2018年 / 10卷 / 02期
基金：
中国国家自然科学基金;
关键词：
electronic resistive switching; highly flexible memory; mechanical endurance; titanium dioxide; electron trapping/detrapping; high performance; NONVOLATILE MEMORY; OXYGEN VACANCIES; GRAPHENE OXIDE; THIN-FILMS; RESISTANCE; DEVICE; FABRICATION; TRANSISTORS; DEPOSITION; SUBSTRATE;
D O I：
10.1021/acsami.7b16214
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A highly flexible resistive switching (RS) was fabricated in the Al/TiO2/Al/polyimide using a simple and cost-effective method. An electronic-resistive-switching-based flexible memory with high performance that can withstand a bending strain of up to 3.6% was obtained. The RS properties showed no obvious degradation even after the bending tests that were conducted up to 10 000 times, and over 4000 writing/erasing cycles were confirmed at the maximally bent state. The superior electrical properties against the mechanical stress of the device can be ascribed to the electronic RS mechanism related to electron trapping/detrapping, which can prevent the inevitable degradation in the case of the RS related with the ionic defects.
引用
收藏
页码：1828 / 1835
页数：8
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