A Low Noise Amplifier in SiGe:C BiCMOS Technology for Ultra-wideband Applications

被引：0
|
作者：
Datta, Prabir Kumar [1 ]
Fischer, Gunter [2 ]
Krishnan, Sivanand [1 ]
机构：
[1] Inst Infocomm Res, 20 Sci Pk Rd, Singapore 117674, Singapore
[2] IHP Microelect, D-15236 Frankfurt, Germany
来源：
2007 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5 | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low noise amplifier (LNA) for ultra-wideband (UWB) applications is presented using active impedance matching technique for efficient wideband input and output matching. Active impedance matching eliminates the use of lossy and area consuming matching network which, in turn, reduce noise figure, power consumption and chip area. The LNA achieves a -3 dB bandwidth of 2-13 GHz with a maximum gain of 11.9 dB. The frequency response is quite flat. In the UWB frequency range of 3.1-10.6 GHz the gain ripple is less than 0.8 dB. The noise figure of the LNA is 3.4 dB to 4.2 dB in the whole UWB range. The LNA consumes 3.1 mA from a 2.5 V dc supply. The LNA was fabricated in SiGe:C HBT BiCMOS process and occupies a chip area of 0.55 mm(2) including pads.
引用
收藏
页码：1437 / +
页数：2
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