Transmission X-ray Diffraction from Bismuth Lines Embedded in Silicon

被引：0

作者：

Tajiri, Hiroo ^{[1
]}

Yashiro, Wataru

Sakata, Osami ^{[1
]}

Sakamoto, Kunihiro

Miki, Kazushi

机构：

[1] Japan Synchrotron Radiat Res Inst, Sayo, Hyogo 6795198, Japan

来源：

TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN, VOL 33, NO 3 | 2008年 / 33卷 / 03期

关键词：

Bi; Atomic wire; Interface structure; Transmission X-ray diffraction; Synchrotron radiation; Si(001);

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have devoted our efforts toward developing transmission X-ray diffraction (TXD) for surface and interface from the viewpoint of realizing more efficient and precise structural analysis than the conventional surface X-ray diffraction. Here, we investigated bismuth lines embedded in a Si(001) substrate, which are promising templates applicable to nanometer-scale device, by TXD. In our experiments with synchrotron X-rays typical one-dimensional diffraction patterns were observed, which obviously indicates that the bismuth lines are still preserved in interface at the atomic scale.

引用

页码：619 / 622

页数：4

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