Electrical properties of GaAs photonic crystal cavity lateral p-i-n diodes

被引：4
|
作者：
Petykiewicz, Jan [1 ]
Shambat, Gary [1 ]
Ellis, Bryan [1 ]
Vuckovic, Jelena [1 ]
机构：
[1] Stanford Univ, EL Ginzton Lab, Stanford, CA 94305 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 01期
关键词：
NANOCAVITY LASER; TEMPERATURE; MOBILITIES; SILICON;
D O I：
10.1063/1.4732782
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate conduction and free-carrier injection in laterally doped GaAs p-i-n diodes formed in one and two-dimensional photonic crystal (PC) nanocavities. Finite element simulations show that the lateral geometry exhibits high conductivity for a wide range of PC parameters and allows for precise control over current flow, enabling efficient carrier injection despite fast surface recombination. Thermal simulations indicate that the temperature increase during steady-state operation is only 3.3 K in nanobeams and 0.29 K in L3 defect nanocavities. The results affirm the suitability of lateral doping in PC devices and indicate criteria for further design optimization. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4732782]
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页数：5
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