Effect of interface plasma treatments on the electrical properties of a-Si:H TFTs

The high stability of a-Si:H TFTs device is made of silicon nitride as dielectric are submitted to the different plasma treatments of the semiconductor/insulator interface by PECVD. The process parameters of plasma gas type, gas flow rate, RF power, and treatment time of interface treatment are taken into account and analyzed by Taguchi experimental design method. Results show the gas type is the major factor that affect the threshold voltage and mobility of a-Si:H TFTs device. In the future, the stressing experiments by using different stressing time with various stressing temperature are used to evaluate the performance of devices.