Electrical Stability of Hexagonal a-Si:H TFTs

被引：0
|
作者：
Yoo, Geonwook [1 ]
Lee, Hojin [1 ]
Kanicki, Jerzy [1 ]
机构：
[1] Univ Michigan, Dept EECS, Ann Arbor, MI 48109 USA
来源：
EURODISPLAY 2009 | 2009年
关键词：
FLAT-PANEL DISPLAYS;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we study the current-temperature stress (CTS) induced electrical instability of single and multiple hexagonal (HEX) hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs). The influence of the threshold voltage shift of single HEX-TFT units on the overall electrical performance of multiple HEX-TFTs is discussed. The results indicate that a-Si:H HEX-TFTs have improved electrical stability and good linearity with the number of parallel-connected HEX-TFT units.
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页码：277 / 279
页数：3
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