EFFECT OF PLASMA PRESSURE ON THE PROPERTIES OF a-Si:H.

被引：0
|
作者：
Wang, Cheng [1 ]
Cheng, Ru-Guang [1 ]
机构：
[1] Acad Sinica, Shanghai, China, Acad Sinica, Shanghai, China
来源：
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties | 1986年 / 53卷 / 03期
关键词：
ACKNOWLEDGMENT This research was aided by the U.S.-China cooperative science programme under Grant NSF TNT 8202084. The authors gratefully acknowledge valuable discussion with H. Fritzsche. They also wish to thank Ye Ya-Gu; Oi -Ming-Weia nd He Ke-run for help in measuring photoluminescence; infrared; and H-evolution spectra; respectively;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
22
引用
下载
收藏
页码：183 / 191
相关论文
共 50 条
  • [1] EFFECT OF ION IMPLANTATION ON OPTICAL PROPERTIES OF a-Si:H.
    Karryev, A.N.
    Akimenko, I.P.
    Gippius, A.A.
    Utkin-Edin, D.P.
    Dravin, V.A.
    Soviet Physics - Lebedev Institute Reports (English Translation of Sbornik Kratkie Soobshcheniya p, 1984, (02): : 39 - 43
  • [2] EFFECT OF ELECTRON RADIATION DAMAGE ON TRANSPORT PROPERTIES OF a-Si:H.
    Chen, Kun-Ji
    Wang, Guang-hou
    Journal of Non-Crystalline Solids, 1985, 77-78 Dec II : 487 - 490
  • [3] DEFECTS IN a-Si:H.
    Morigaki, K.
    Yamaguchi, M.
    Hirabayashi, I.
    Hayasi, R.
    1600, Plenum Press, New York, NY, USA
  • [4] GERMINATE RECOMBINATION IN a-Si:H.
    Sun Zhonglin
    Xiong Shaozhen
    Xu, Wenyuan
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1983, 4 (05): : 464 - 470
  • [5] EFFECT OF PLASMA PARAMETERS ON THE PROPERTIES OF HYDROGEN IN a-Si:H FILMS AND RELEASE MECHANISM OF HYDROGEN IN a-Si:H FILMS.
    Wang Cheng
    He Kelun
    Cheng Ruguang
    Qi Mingwei
    Hongwai Yanjiu/Chinese Journal of Infrared Research, 1985, 4 (06): : 413 - 420
  • [6] Effect of interface plasma treatments on the electrical properties of a-Si:H TFTs
    Wu, Chuan-Yi
    Ma, Chia-Hsuan
    IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2, 2005, : 1085 - 1088
  • [7] EFFECT OF PLASMA PRESSURE ON THE PROPERTIES OF A-SI-H
    WANG, C
    CHENG, RG
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 53 (03): : 183 - 191
  • [8] ROLE OF HYDROGEN IN THE STAEBLER-WRONSKI EFFECT OF a-Si:H.
    Ohsawa, Michio
    Hama, Toshio
    Akasaka, Toshiaki
    Ichimura, Takeshige
    Sakai, Hiroshi
    Ishida, Sueshige
    Uchida, Yoshiyuki
    Japanese Journal of Applied Physics, Part 2: Letters, 1985, 24 (10): : 838 - 840
  • [9] DOPANT AND DEFECT STATES IN a-Si:H.
    Street, R.A.
    Biegelsen, D.K.
    Jackson, W.B.
    Johnson, N.M.
    Stutzmann, M.
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1985, 52 (03): : 235 - 245
  • [10] CARRIER DYNAMICS IN OPTICALLY ILLUMINATED a-Si:H.
    Aoyagi, Yoshinobu
    Komuro, Shuji
    Segawa, Yusaburo
    Namba, Susumu
    Okamoto, Hiroaki
    Hamakawa, Yoshihiro
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt II): : 894 - 896
12345