EFFECT OF PLASMA PRESSURE ON THE PROPERTIES OF a-Si:H.

被引:0
|
作者
Wang, Cheng [1 ]
Cheng, Ru-Guang [1 ]
机构
[1] Acad Sinica, Shanghai, China, Acad Sinica, Shanghai, China
关键词
ACKNOWLEDGMENT This research was aided by the U.S.-China cooperative science programme under Grant NSF TNT 8202084. The authors gratefully acknowledge valuable discussion with H. Fritzsche. They also wish to thank Ye Ya-Gu; Oi -Ming-Weia nd He Ke-run for help in measuring photoluminescence; infrared; and H-evolution spectra; respectively;
D O I
暂无
中图分类号
学科分类号
摘要
22
引用
下载
收藏
页码:183 / 191
相关论文
共 50 条
  • [41] KINETIC BEHAVIORS OF THE TIME-DEPENDENCE OF PHOTOCONDUCTIVITY IN a-Si:H.
    Gu, Benyuan
    Han, Daxing
    Li, Chenxi
    1600, (77-78 Dec II):
  • [42] ELECTRONIC-PROPERTIES OF A-SI,S-H AND A-SI,SE-H ALLOYS
    ALJISHI, S
    ALDALLAL, S
    ALALAWI, SM
    HAMMAM, M
    ALALAWI, HS
    STUTZMANN, M
    JIN, S
    MUSCHIK, T
    SCHWARZ, R
    SOLAR ENERGY MATERIALS, 1991, 23 (2-4): : 334 - 339
  • [43] Remote silane plasma chemistry effects and their correlation with a-Si:H film properties
    Kessels, WMM
    Smets, AHM
    Korevaar, BA
    Adriaenssens, GJ
    Van de Sanden, MCM
    Schram, DC
    AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999, 1999, 557 : 25 - 30
  • [44] The charge transport properties of a-Si:H thin films under hydrostatic pressure
    Hahn, W.
    Boshta, M.
    Baerner, K.
    Braunstein, R.
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 130 (1-3): : 184 - 188
  • [45] THE EFFECT OF THE GAP DOS IN A-SI ON THE PROPERTIES ON THE A-SI/C-SI HETEROJUNCTION
    XU, ZY
    CHEN, W
    ZHAO, BF
    WANG, CA
    ZHANG, FQ
    WANG, JY
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 983 - 986
  • [46] Influence of base pressure and atmospheric contaminants on a-Si:H solar cell properties
    Woerdenweber, J.
    Merdzhanova, T.
    Schmitz, R.
    Mück, A.
    Zastrow, U.
    Niessen, L.
    Gordijn, A.
    Carius, R.
    Beyer, W.
    Stiebig, H.
    Rau, U.
    Journal of Applied Physics, 2008, 104 (09):
  • [47] RECOMBINATION-ENHANCED DEFECT FORMATION AND ANNEALING IN a-Si:H.
    Redfield, David
    1987,
  • [48] Impact of a-Si:H hydrogen depth profiles on passivation properties in a-Si:H/c-Si heterojunctions
    Schulze, T. F.
    Korte, L.
    Rech, B.
    THIN SOLID FILMS, 2012, 520 (13) : 4439 - 4444
  • [49] Effect of prolonged illumination on the properties of compensated hydrogenated silicon a-Si:H
    Kazanskii, AG
    Yarkin, DG
    SEMICONDUCTORS, 1996, 30 (04) : 397 - 399
  • [50] PROTON T1 FOR SOLID H2 IN a-Si:H.
    Bork, V.P.
    Fedders, P.A.
    Norberg, R.E.
    Boyce, J.B.
    Stutzmann, M.
    1600, (77-78 Dec II):