Photoluminescence in InGaAsSb/AlGaAsSb quantum wells: impact of nonradiative recombination

被引：3
|
作者：
Vinnichenko, M. Ya [1 ]
Makhov, I. S. [1 ]
Selivanov, A. V. [1 ]
Firsov, D. A. [1 ]
Vorobjev, L. E. [1 ]
Shterengas, L. [2 ]
Belenky, G. [2 ]
机构：
[1] Peter Great St Petersburg Polytech Univ, 29 Polytech Skaya Str, St Petersburg 195251, Russia
[2] SUNY Stony Brook, Dept Elect & Comp Engn, New York, NY 11794 USA
来源：
18TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS | 2017年 / 816卷
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1088/1742-6596/816/1/012017
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The photoluminescence in nanostructures with InGaAsSb/AlGaAsSb quantum wells of different widths is investigated experimentally under different pumping levels and theoretically. The experimentally determined dependencies of photoluminescence intensity on the optical pumping level are compared with the calculated dependences of photoluminescence intensity on the nonequilibrium carrier concentration. The presence of resonant nonradiative Auger recombination in one of the investigated samples is proved by the comparison between experiment and calculations.
引用
收藏
页数：6
相关论文
共 50 条
  • [41] Demonstration of light-hole behavior in quaternary GaInAsSb/AlGaAsSb quantum wells using infrared photoluminescence spectroscopy
    Shen, WZ
    Shen, SC
    Tang, WG
    Chang, Y
    Zhao, Y
    Liu, AZ
    APPLIED PHYSICS LETTERS, 1996, 69 (07) : 952 - 954
  • [42] AlxGa1-xN-Based Quantum Wells Fabricated on Macrosteps Effectively Suppressing Nonradiative Recombination
    Hayakawa, Minehiro
    Ichikawa, Shuhei
    Funato, Mitsuru
    Kawakami, Yoichi
    ADVANCED OPTICAL MATERIALS, 2019, 7 (02)
  • [43] Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination
    Yapparov, Rinat
    Lynsky, Cheyenne
    Nakamura, Shuji
    Speck, James S.
    Marcinkevicius, Saulius
    APPLIED PHYSICS EXPRESS, 2020, 13 (12)
  • [44] PHOTOLUMINESCENCE CHARACTERIZATION OF NONRADIATIVE RECOMBINATION IN CARBON-DOPED GAAS
    CALDERON, L
    LU, Y
    SHEN, H
    PAMULAPATI, J
    DUTTA, M
    CHANG, WH
    YANG, LW
    WRIGHT, PD
    APPLIED PHYSICS LETTERS, 1992, 60 (13) : 1597 - 1599
  • [45] Nonradiative recombination of excitons in semimagnetic quantum dots
    A. V. Chernenko
    Semiconductors, 2015, 49 : 1575 - 1581
  • [46] Annealing effects in InGaAsSb quantum wells with pentenary AlInGaAsSb barriers
    Bugge, Renato
    Fimland, Bjorn-Ove
    PHYSICA SCRIPTA, 2006, T126 : 15 - 20
  • [47] Nonradiative Recombination of Excitons in Semimagnetic Quantum Dots
    Chernenko, A. V.
    SEMICONDUCTORS, 2015, 49 (12) : 1575 - 1581
  • [48] Optimal design of the active regions for InGaAsSb/AlGaAsSb long wavelength multi quantum well lasers
    Xu, GY
    Li, AZ
    ACTA PHYSICA SINICA, 2004, 53 (01) : 218 - 225
  • [49] Study of AlGaAsSb/InGaAsSb strained quantum well grown by molecular beam epitaxy on GaSb(100)
    Lin, C
    Zhen, YL
    Li, AZ
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 75 (2-3): : 170 - 173
  • [50] Photoluminescence properties of type I InAs/InGaAsSb quantum dots
    Afef Ben Mansour
    Rihab Sellami
    Adnen Melliti
    Abdelmajid Salhi
    The European Physical Journal B, 2022, 95
12345