Photoluminescence in InGaAsSb/AlGaAsSb quantum wells: impact of nonradiative recombination

被引：3
|
作者：
Vinnichenko, M. Ya [1 ]
Makhov, I. S. [1 ]
Selivanov, A. V. [1 ]
Firsov, D. A. [1 ]
Vorobjev, L. E. [1 ]
Shterengas, L. [2 ]
Belenky, G. [2 ]
机构：
[1] Peter Great St Petersburg Polytech Univ, 29 Polytech Skaya Str, St Petersburg 195251, Russia
[2] SUNY Stony Brook, Dept Elect & Comp Engn, New York, NY 11794 USA
来源：
18TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS | 2017年 / 816卷
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1088/1742-6596/816/1/012017
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The photoluminescence in nanostructures with InGaAsSb/AlGaAsSb quantum wells of different widths is investigated experimentally under different pumping levels and theoretically. The experimentally determined dependencies of photoluminescence intensity on the optical pumping level are compared with the calculated dependences of photoluminescence intensity on the nonequilibrium carrier concentration. The presence of resonant nonradiative Auger recombination in one of the investigated samples is proved by the comparison between experiment and calculations.
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页数：6
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