Control of verticality and (111) orientation of In-catalyzed silicon nanowires grown in the vapour-liquid-solid mode for nanoscale device applications

被引：8

作者：

Khan, M. Ajmal ^{[1
]}

Ishikawa, Y. ^{[1
,2
]}

Kita, I. ^{[2
]}

Fukunaga, K. ^{[2
]}

Fuyuki, T. ^{[2
]}

Konagai, M. ^{[1
,3
]}

机构：

[1] Japan Sci & Technol Agcy, FUTURE PV, Fukushima 9630215, Japan

[2] Nara Inst Sci & Technol, Grad Sch Mat Sci, Ikoma, Nara 6300101, Japan

[3] Tokyo Inst Technol, Dept Phys Elect, Meguro, Tokyo 1528552, Japan

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2015年 / 3卷 / 44期

关键词：

SUPERLATTICES;

D O I：

10.1039/c5tc01338k

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Vertically aligned silicon nanowires (Si NWs) with (111) orientation were developed using the vapor-liquid-solid growth mode with control of the interface between the In nanodroplets (In NDs) and the Si substrate. We found that the contact angle of the In NDs is critical for the growth of vertically aligned Si NWs. The diameter of the Si NWs was also scaled down to 18 nm.

引用

页码：11577 / 11580

页数：4

共 27 条

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