The role of randomly distributed well widths in disordered GaAs/AlGaAs superlattices

被引：13
|
作者：
Lorusso, GF
Capozzi, V
Staehli, JL
Flesia, C
Martin, D
Favia, P
Perna, G
机构：
[1] UNIV BARI,DIPARTMENTO FIS,I-70126 BARI,ITALY
[2] IST NAZL FIS MAT,I-70126 BARI,ITALY
[3] UNIV GENEVA,APPL PHYS GRP,CH-1211 GENEVA 4,SWITZERLAND
[4] ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTOELECTR,CH-1015 LAUSANNE,SWITZERLAND
[5] ECOLE POLYTECH FED LAUSANNE,INST GENIE ATOM,CH-1015 LAUSANNE,SWITZERLAND
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1996年 / 11卷 / 03期
关键词：
D O I：
10.1088/0268-1242/11/3/007
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Numerical and experimental results on the effect of randomness in GaAs/Al0.3Ga0.7As superlattices having a small number of randomly distributed well widths are reported. The numerical results indicate the splitting of the extended state miniband into sub-minibands of localized states having a disorder-induced fine structure. The comparison between the experimental results for low-temperature absorption spectra and the computed joint density of states of the investigated samples confirms the predicted features. The high-temperature photoluminescence intensity of random superlattices is observed to be enhanced with respect to the ordered case.
引用
收藏
页码：308 / 314
页数：7
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