Collective plasma response of interacting electrons localized in disordered GaAs/AlGaAs superlattices

被引：0

作者：

Pusep, YA ^{[1
]}

Fortunato, W ^{[1
]}

González-Borrero, PP ^{[1
]}

Toropov, AI ^{[1
]}

Galzerani, JC ^{[1
]}

机构：

[1] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, Brazil

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The collective plasmon-like excitations were studied by Raman scattering in intentionally disordered GaAs/AlGaAs superlattices; with various strengths of disorder and different electron densities, We found that in the presence of disorder, the collective excitations tend to form coherently oscillating clusters with a finite extent. It was shown that both the temperature and disorder distroy them.

引用

页码：619 / 620

页数：2

共 29 条

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Pusep, YA
Fortunato, W
González-Borrero, PP
Toropov, AI
Galzerani, JC
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[J]. Pusep, Yu. A. (vyap@power.ufscar.br), 1600, American Institute of Physics Inc. (88):

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