MULTIPLICATION NOISE IN GAAS/ALGAAS MULTIQUANTUM WELL AVALANCHE PHOTODIODES WITH DIFFERENT WELL WIDTHS

被引：4
|
作者：
SALOKATVE, A
TOIVONEN, M
HOVINEN, M
机构：
[1] Tampere University of Technology, Department of Physics, SF-33101, Tampere
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 04期
关键词：
PHOTODIODES; DIODES; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19920261
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The dependence of multiplication excess noise of GaAs/Al0.36Ga0.64As multiquantum well avalanche photodiodes on GaAs well width was studied through noise measurements. Three samples with approximately 480 angstrom barriers and wells of 134, 278, and 445 angstrom in thickness were grown by molecular beam epitaxy. An effective ratio of hole and electron ionisation rates of 0.4 was measured for all the samples, indicating that it cannot be affected by varying the well width in the range of layer thicknesses studied in the Letter.
引用
收藏
页码：416 / 417
页数：2
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