A dual band SiGe MMIC LNA and mixer with ground shield for WCDMA and CDMA applications

被引：0

作者：

Kim, YG ^{[1
]}

Yoon, SY ^{[1
]}

Kim, H ^{[1
]}

Yoo, SH ^{[1
]}

Kim, YG ^{[1
]}

Baek, KS ^{[1
]}

Kim, CW ^{[1
]}

Cho, DH ^{[1
]}

Han, TH ^{[1
]}

Ryum, BR ^{[1
]}

机构：

[1] Anyang Univ, Manan Gu, Anyang City 430714, Kyungki Do, South Korea

来源：

RAWCON 2001: IEEE RADIO AND WIRELESS CONFERENCE, PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/RAWCON.2001.947496

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

A single chip 2.7V dual band SiGe RF front end for 2140MHz WCDMA and 882MHz CDMA operation has been implemented by a standard SiGe bipolar process with an f(max) of 50GHz utilizing a ground shield layer structure upon low resistive silicon substrate, The LNAs are gain controllable single stage amplifiers with high linear characteristics. The mixer circuits are double balanced Gilbert type micro-mixers with differential IF buffer amplifiers.

引用

页码：41 / 44

页数：4

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