Effects of gamma-ray irradiation and thermal annealing on electrical characteristics of SiC MOSFETs

被引：0

作者：

Ohshima, T ^{[1
]}

Yoshikawa, M ^{[1
]}

Itoh, H ^{[1
]}

Takahashi, T ^{[1
]}

Okumura, H ^{[1
]}

Yoshida, S ^{[1
]}

Nashiyama, I ^{[1
]}

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The measurements of drain-current vs. gate-voltage were performed to study the generation and annealing of radiation induced interface traps in 3C-SiC MOS-FETs. Depletion type MOS-FETs fabricated from 3C-SiC epitaxially grown on Si were irradiated with gamma-rags up to 840 kGy(SiO2). The MOS-FETs were found to work alter irradiation up to 840 kGy. From the analysis on annealing kinetics of radiation-induced interface traps by using the rate-equation of chemical reaction, it nas deduced that the radiation-induced interface traps consist of three different components. An activation energy for annealing or one of three components was found to be 0.35 eV, which is close to the activation energy for diffusion of water in SiO2.

引用

页码：801 / 804

页数：4

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