Measurement of Total Ionizing Dose Effects on SiC Trench MOSFETs by Gamma-ray and Alpha-particle Irradiation

被引：1
|
作者：
Furuta, Jun [1 ]
Mizushima, Masatoshi [1 ]
Kobayashi, Kazutoshi [1 ]
机构：
[1] Kyoto Inst Technol, Grad Sch Sci Technol, Kyoto, Japan
来源：
2022 22ND EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, RADECS | 2022年
关键词：
total ionizing dose effect; SiC trench MOSFET; alpha particle; CHARGE;
D O I：
10.1109/RADECS55911.2022.10412400
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We measured total ionizing dose effect (TID) on Si, SiC planar and SiC trench power MOSFETs by using Co-60.-ray source and Am-241 a-particle source. Measurement results show that SiC power MOSFETs have higher tolerance to.ray irradiation. In contrast, the SiC trench MOSFET is most vulnerable to a-particle-induced TID. Threshold voltage shift, Delta V-th of the SiC trench MOSFET is -4.8 V after 150 krad aparticle irradiation, which is 12.6% larger than that in the Si MOSFET. In this measurements, the SiC planar MOSFET has the highest tolerance for both a-particle and.-ray irradiation.Delta V-th of the SiC planar MOSFET is 1/20 or less than that of the Si MOSFET.
引用
收藏
页码：83 / 87
页数：5
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