Measurement of Total Ionizing Dose Effects on SiC Trench MOSFETs by Gamma-ray and Alpha-particle Irradiation

被引：1

作者：

Furuta, Jun ^{[1
]}

Mizushima, Masatoshi ^{[1
]}

Kobayashi, Kazutoshi ^{[1
]}

机构：

[1] Kyoto Inst Technol, Grad Sch Sci Technol, Kyoto, Japan

来源：

2022 22ND EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, RADECS | 2022年

关键词：

total ionizing dose effect; SiC trench MOSFET; alpha particle; CHARGE;

D O I：

10.1109/RADECS55911.2022.10412400

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We measured total ionizing dose effect (TID) on Si, SiC planar and SiC trench power MOSFETs by using Co-60.-ray source and Am-241 a-particle source. Measurement results show that SiC power MOSFETs have higher tolerance to.ray irradiation. In contrast, the SiC trench MOSFET is most vulnerable to a-particle-induced TID. Threshold voltage shift, Delta V-th of the SiC trench MOSFET is -4.8 V after 150 krad aparticle irradiation, which is 12.6% larger than that in the Si MOSFET. In this measurements, the SiC planar MOSFET has the highest tolerance for both a-particle and.-ray irradiation.Delta V-th of the SiC planar MOSFET is 1/20 or less than that of the Si MOSFET.

引用

页码：83 / 87

页数：5

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