Effects of gamma-ray irradiation on electrical characteristics of 6H-SiC metal-oxide-semiconductor structures

被引：0
|
作者：
Yoshikawa, M.
Takahashi, Y.
Ohshima, T.
Ohnishi, K.
Itoh, H.
Okumura, H.
Nashiyama, I.
Yoshida, S.
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来源：
Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory | 1998年 / 62卷 / 10期
关键词：
Electric properties - Electron traps - Gamma rays - High temperature effects - Ionizing radiation - Semiconductor device manufacture - Silicon carbide;
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页码：39 / 47
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