Wavelength stable, p-side-down green light emitting diodes grown by molecular beam epitaxy

p-side-down, single heterostructure n-InGaN/p-GaN light emitting diodes grown by molecular beam epitaxy exhibited stable peak emission wavelengths as long as 550nm for current densities in excess of 100 A/cm(2), and minimal efficiency droop up to 150 A/cm(2) without the use of an electron blocking layer. This behavior is consistent with the formation of a two-dimensional hole gas in the n-InGaN layer and a higher barrier to electron overflow in the conduction band due to the negative polarization charge at the n-InGaN/p-GaN interface. (C) 2013 American Vacuum Society. [http://dx.doi.org/10.1116/1.4769732]