Molecular beam epitaxy growth of midinfrared "W" light emitting diodes on InAs

被引：0
|
作者：
Kuznetsov, Vladimir V.
Wicks, G. W.
机构：
[1] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
[2] Univ Rochester, Inst Opt, Rochester, NY 14627 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 03期
关键词：
D O I：
10.1116/1.2200379
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied how midwave infrared (MWIR) photo- and electroluminescence of type-II "W" InAs/InGaSb/InAs/AlGaAsSb quantum well structures depend on molecular beam epitaxy growth conditions and substrate material. All samples were grown with Sb-4, in contrast to most recent reports that use Sb-2. Resulting devices represent the highest reported external differential efficiency for molecular beam epitaxy grown light emitting diodes emitting in the 4.3-4.6 mu m wavelength range in the continuous wave mode at the room temperature. Another important aspect of the work is the finding that MWIR emitters on InAs substrates are superior to those on conventionally used GaSb substrates. (c) 2006 American Vacuum Society.
引用
收藏
页码：1548 / 1552
页数：5
相关论文
共 50 条
  • [1] Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes
    Carrington, P. J.
    de la Mare, M.
    Cheetham, K. J.
    Zhuang, Q.
    Krier, A.
    ADVANCES IN OPTOELECTRONICS, 2011, 2011
  • [2] Solid source molecular beam epitaxy growth and characteristics of resonant cavity light-emitting diodes
    Saarinen, M
    Orsila, S
    Toivonen, M
    Savolainen, P
    Kuuslahti, T
    Vilokkinen, V
    Melanen, P
    Sipilä, P
    Pessa, M
    LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS III, 1999, 3621 : 230 - 236
  • [3] Solid source molecular beam epitaxy growth and characterization of resonant cavity light-emitting diodes
    Orsila, S
    Köngäs, J
    Toivonen, M
    Savolainen, P
    Jalonen, M
    Pessa, M
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 985 - 989
  • [4] InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy
    Hooper, SE
    Kauer, M
    Bousquet, V
    Johnson, K
    Zellweger, C
    Heffernan, J
    JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 361 - 366
  • [5] On the growth of InAs nanowires by molecular beam epitaxy
    Martelli, Faustino
    Rubini, Silvia
    Jabeen, Fauzia
    Felisari, Laura
    Grillo, Vincenzo
    JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) : 297 - 300
  • [6] High-power InGaN light emitting diodes grown by molecular beam epitaxy
    Johnson, K
    Bousquet, V
    Hooper, SE
    Kauer, M
    Zellweger, C
    Heffernan, J
    ELECTRONICS LETTERS, 2004, 40 (20) : 1299 - 1300
  • [7] Electrical characterization of InGaN/GaN light emitting diodes grown by molecular beam epitaxy
    Hirsch, L
    Barrière, AS
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (08) : 5014 - 5020
  • [8] Deep UV light emitting diodes grown by gas source molecular beam epitaxy
    Nikishin, Sergey
    Borisov, Boris
    Kuryatkov, Vladimir
    Holtz, Mark
    Garrett, Gregory A.
    Sarney, Wendy L.
    Sampath, Anand V.
    Shen, Hongen
    Wraback, Michael
    Usikov, Alexander
    Dmitriev, Vladimir
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2008, 19 (8-9) : 764 - 769
  • [9] Deep UV light emitting diodes grown by gas source molecular beam epitaxy
    Sergey Nikishin
    Boris Borisov
    Vladimir Kuryatkov
    Mark Holtz
    Gregory A. Garrett
    Wendy L. Sarney
    Anand V. Sampath
    Hongen Shen
    Michael Wraback
    Alexander Usikov
    Vladimir Dmitriev
    Journal of Materials Science: Materials in Electronics, 2008, 19 : 764 - 769
  • [10] GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy
    Guha, S
    Bojarczuk, NA
    ELECTRONICS LETTERS, 1997, 33 (23) : 1986 - 1987
12345