Molecular beam epitaxy growth of midinfrared "W" light emitting diodes on InAs

被引：0
|
作者：
Kuznetsov, Vladimir V.
Wicks, G. W.
机构：
[1] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
[2] Univ Rochester, Inst Opt, Rochester, NY 14627 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 03期
关键词：
D O I：
10.1116/1.2200379
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied how midwave infrared (MWIR) photo- and electroluminescence of type-II "W" InAs/InGaSb/InAs/AlGaAsSb quantum well structures depend on molecular beam epitaxy growth conditions and substrate material. All samples were grown with Sb-4, in contrast to most recent reports that use Sb-2. Resulting devices represent the highest reported external differential efficiency for molecular beam epitaxy grown light emitting diodes emitting in the 4.3-4.6 mu m wavelength range in the continuous wave mode at the room temperature. Another important aspect of the work is the finding that MWIR emitters on InAs substrates are superior to those on conventionally used GaSb substrates. (c) 2006 American Vacuum Society.
引用
收藏
页码：1548 / 1552
页数：5
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