X-ray diffraction topography for materials science

被引：13

作者：

Shul'pina, I. L. ^{[1
]}

Prokhorov, I. A. ^{[2
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Russian Acad Sci, Res Ctr Space Mat Sci, Branch Shubnikov Inst Crystallog, Kaluga 248640, Russia

来源：

CRYSTALLOGRAPHY REPORTS | 2012年 / 57卷 / 05期

关键词：

SINGLE-CRYSTALS; STRUCTURAL FEATURES; GROWTH STRIATIONS; DISLOCATIONS;

D O I：

10.1134/S106377451205015X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper, which is dedicated to the 100th anniversary of the discovery of X-ray diffraction (which occurs in 2012), the role and significance of X-ray diffraction topography for materials science are described. The basic principles, methods, and history of the development of X-ray topography (XRT) are briefly stated. A wide experience of practical application of XRT to study the mechanisms of formation of real structure in bulk single crystals and thin films is summarized. Examples of the application of topography methods for investigating and optimizing the production technology of a variety of practically important materials and microelectronic devices are presented.

引用

页码：661 / 669

页数：9

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