Numerical simulations of sputter deposition and etching in trenches using the level set technique

被引:0
|
作者
O'Sullivan, PL [1 ]
Baumann, FH [1 ]
Gilmer, GH [1 ]
机构
[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
We have performed 2D and quasi-3D numerical simulations of physical vapor deposition (PVD) into high aspect ratio trenches used for modern VLSI interconnects. The topographic evolution is modeled using (continuum) level set methods. The level set approach is a powerful mathematical/computational technique for accurately tracking moving interfaces or boundaries, where the advancing front is embedded as the tao level set (isosurface) of a higher dimensional mathematical function. The technique can be equally well applied to etching, including the incorporation of complex mask shapes. First, we study 2D cases for long rectangular trenches including the quasi-3D case in which the 3D target flux is mathematically reduced to an equivalent 2D flux. The 3D flux is obtained from molecular dynamics computations for Al(100), and hence our approach represents a hybrid atomistic/continuum model. We obtain good agreement with X-TEM data. Finally, we present results for etching problems of relevance to shallow trench isolation in electronic devices.
引用
收藏
页码:220 / 223
页数:4
相关论文
共 50 条
  • [1] Numerical simulations of sputter deposition and etching in trenches using the level set technique
    O'Sullivan, PL
    Baumann, FH
    Gilmer, GH
    [J]. 1999 INTERNATIONAL CONFERENCE ON MODELING AND SIMULATION OF MICROSYSTEMS, 1999, : 449 - 451
  • [2] Numerical simulations of topographic evolution for sputter deposition into trenches and vias
    O'Sullivan, PL
    Baumann, FH
    Gilmer, GH
    [J]. ADVANCED INTERCONNECTS AND CONTACTS, 1999, 564 : 313 - 319
  • [3] Level-set Modeling of sputter deposition
    Kwon, O
    Jung, H
    Kim, YT
    Yoon, I
    Won, T
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 40 (01) : 72 - 76
  • [4] The level set method for etching and deposition
    Adalsteinsson, D
    Evans, LC
    Ishii, H
    [J]. MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES, 1997, 7 (08): : 1153 - 1186
  • [5] SELF-LIMITING ETCH DEPTHS USING SIMULTANEOUS SPUTTER ETCHING DEPOSITION TECHNIQUE
    BERG, S
    GELIN, B
    OSTLING, M
    BABULANAM, SM
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 470 - 473
  • [6] Novel Numerical Dissipation Scheme for Level-Set Based Anisotropic Etching Simulations
    Toifl, Alexander
    Quell, Michael
    Hoessinger, Andreas
    Babayan, Artem
    Selberherr, Siegfried
    Weinbub, Josef
    [J]. 2019 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2019), 2019, : 327 - 330
  • [7] Numerical simulations for the motion of soap bubbles using level set methods
    Kang, Myungloo
    Merriman, Barry
    Osher, Stanley
    [J]. COMPUTERS & FLUIDS, 2008, 37 (05) : 524 - 535
  • [8] On the topography simulation of memory cell trenches for semiconductor manufacturing deposition processes using the level set method
    Heitzinger, C
    Selberherr, S
    [J]. MODELLING AND SIMULATION 2002, 2002, : 653 - 660
  • [9] An overview of level set methods for etching, deposition, and lithography development
    Sethian, JA
    Adalsteinsson, D
    [J]. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1997, 10 (01) : 167 - 184
  • [10] A LEVEL SET APPROACH TO A UNIFIED MODEL FOR ETCHING, DEPOSITION, AND LITHOGRAPHY .2. 3-DIMENSIONAL SIMULATIONS
    ADALSTEINSSON, D
    SETHIAN, JA
    [J]. JOURNAL OF COMPUTATIONAL PHYSICS, 1995, 122 (02) : 348 - 366