Properties of phosphorus implanted mold type diamond FEAs

被引：0
|
作者：
Lee, JD [1 ]
Cho, ES [1 ]
Park, BG [1 ]
Kwon, SJ [1 ]
机构：
[1] Seoul Natl Univ, ISRC, Kwanak Gu, Seoul 151742, South Korea
来源：
IVMC 2000: PROCEEDINGS OF THE 14TH INTERNATIONAL VACUUM MICROELECTRONICES CONFERENCE | 2001年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Phosphorus implantation was performed at various process steps in the fabrication of the mold type diamond FEAs. Fabricated doped diamond FEAs were structurally investigated by scanning electron microscope (SEM) and Raman spectroscopy and the results were compared with those of flat diamond films. The Raman spectroscopy showed the same doping effect on both flat film and mold FEAs in the same doping condition.
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页码：203 / 204
页数：2
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