Effect of proton irradiation on the mobility of two-dimensional electron in AlGaN/AlN/GaN high electron mobility transistors at low temperature

被引：11

作者：

Tang, Jinjin ^{[1
]}

Liu, Guipeng ^{[1
]}

Zhao, Guijuan ^{[1
]}

Xing, Shu'an ^{[1
]}

Malik, Salamat Ali ^{[1
]}

机构：

[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2020年 / 38卷 / 02期

基金：

中国国家自然科学基金;

关键词：

RADIATION-DAMAGE; PERFORMANCE; GALLIUM; GAS; RF; DC;

D O I：

10.1116/1.5134840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors simulated the damage caused by proton irradiation to the device and analyzed the effect of proton irradiation on two-dimensional electron mobility taking various scattering mechanisms into account. Proton-irradiation simulation of the AlGaN/AlN/GaN HEMT device was carried out to obtain the irradiation simulation results by using SRIM software. Then, considering various scattering mechanisms, the authors established a model to simulate two-dimensional electron mobility under different proton energy and irradiation doses at low temperature. The theoretical data show that proton irradiation significantly decreased the mobility of a two-dimensional electron in a GaN-based HEMT at low temperature.

引用

页数：6

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