Diffusion and Interface Segregation of Phosphorus and Boron in Bulk Germanium, Germanium Nanomembranes, and Nanowires

This work investigates the diffusion and segregation of boron and phosphorus in bulk germanium, germanium membrane and nanowire. The diffusion simulation indicates the phosphorus diffusion is first enhanced in Ge nanomembrane due to preservation of high dopant concentration. However, the segregation at Ge-SiO2 interfaces slows down the diffusion of phosphorus because it results in the reduction of dopant dose by loss to the oxide. The lateral diffusion of boron does not change much between bulk and nanomembrane structures and it is hardly impacted by the interface segregation.