Diffusion and Interface Segregation of Phosphorus and Boron in Bulk Germanium, Germanium Nanomembranes, and Nanowires

被引：0
|
作者：
Liu, Tong [1 ]
Ndoye, Coumba [1 ]
Orlowski, Marius [1 ]
机构：
[1] Virginia Tech, Dept Elect & Comp Engn, Blacksburg, VA 24061 USA
来源：
SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES | 2010年 / 33卷 / 06期
关键词：
D O I：
10.1149/1.3487609
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
This work investigates the diffusion and segregation of boron and phosphorus in bulk germanium, germanium membrane and nanowire. The diffusion simulation indicates the phosphorus diffusion is first enhanced in Ge nanomembrane due to preservation of high dopant concentration. However, the segregation at Ge-SiO2 interfaces slows down the diffusion of phosphorus because it results in the reduction of dopant dose by loss to the oxide. The lateral diffusion of boron does not change much between bulk and nanomembrane structures and it is hardly impacted by the interface segregation.
引用
收藏
页码：791 / 797
页数：7
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