Process-induced charge trapping and junction breakdown instability in deep trench isolation for high voltage Smart Power IC process

被引：0

作者：

Kim, Hee-dae ^{[1
]}

Park, Ju-won ^{[1
]}

Ko, Choul-Joo ^{[1
]}

Jun, Bon-Keun ^{[1
]}

Moon, Namchil ^{[1
]}

Kwon, KyungWook ^{[1
]}

Lee, Changjun ^{[1
]}

Sung, Kunsik ^{[1
]}

Kim, Nam-Joo ^{[1
]}

Yoo, Kwang-Dong ^{[1
]}

Lee, Yoon-Jong ^{[1
]}

机构：

[1] Dongbu Hitek, Analog Foundry Proc Dev Team, Puchon 420712, Gyeonggi Do, South Korea

来源：

2012 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID STATE CIRCUIT (EDSSC) | 2012年

关键词：

DTI(Deep Trench Isolation); Avalanche junction breakdown; Charge trapping; Walkout;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In BCD process for high voltage Smart Power IC, junction breakdown instability in DTI(Deep Trench Isolation) process is strongly depend on the process-induced mechanical stress and DTI test pattern shape. The DTI test pattern with sharp corner generates larger charge trap density and larger breakdown voltage shift than that of round corner test pattern. Through 3D TCAD simulation and SEM/TEM analysis, we noticed that sharp corner type has higher process-induced mechanical stress and more silicon dislocation defect than that of round corner type.

引用

页数：4

共 25 条

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