Fabrication of Trench Isolation and Trench Power MOSFETs in a Smart Power IC Technology with a Single Trench Unit Process

被引：8

作者：

Kadow, Christoph ^{[1
]}

Decker, Stefan ^{[1
]}

Dibra, Donald ^{[1
]}

Krischke, Norbert ^{[1
]}

Lanzerstorfer, Sven ^{[2
]}

Maier, Hubert ^{[2
]}

Meyer, Thorsten ^{[1
]}

Vannucci, Nicola ^{[2
]}

Zink, Robert ^{[2
]}

机构：

[1] Infineon Technol AG, Automot Div, Neubiberg, Germany

[2] Infineon Technol AG, Automot Div, Vilach, Austria

来源：

2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2009年

关键词：

D O I：

10.1109/ISPSD.2009.5158042

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We report on using a single trench unit process for the trench isolation and for the trench power MOSFET of a common-drain smart power IC technology. The trench power MOSFET has a maximum specific on-resistance, (R-on.A), below 50m Omega-mm(2) and a typical breakdown voltage, V-br, of 95V. The trench isolation provides well isolation up to 90V. Using a single trench unit process for both devices results in low process costs. In addition both power and logic areas of a chip benefit from the trench process.

引用

页码：224 / +

页数：2

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